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Si5855CDC
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I S
I SM
T C = 25 °C
- 2.3
- 10
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = - 2 A, V GS = 0 V
I F = - 2 A dI/dt = 100 A/μs T J = 25 °C
- 0.8
23
13
10
13
- 1.2
35
20
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 1 A
I F = 1 A, T J = 125 °C
Min.
Typ.
0.34
0.255
Max.
0.375
0.290
Unit
V
V r = 20 V
0.05
0.500
Maximum Reverse Leakage Current
I rm
V r = 20 V, T J = 85 °C
2
20
mA
V r = 20 V, T J = 125 °C
10
100
Junction Capacitance
C T
V r = 10 V
90
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
V GS = 5 V thru 2.5 V
V GS = 2 V
2.0
1.5
6
1.0
4
V GS = 1.5 V
0.5
T C = 25 °C
2
0
V GS = 1 V
0.0
T C = 125 °C
T C = - 55 °C
0
1
2
3
4
5
0.0
0.3
0.6
0.9
1.2
1.5
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
Document Number: 68910
S10-0548-Rev. B, 08-Mar-10
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
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